NRL Scientists Achieve High Temperature Milestone in Silicon Spintronics

Naval Research Laboratory
May 5, 2011

Researchers in the Materials Science and Technology Division of the Naval Research Laboratory have recently demonstrated electrical injection, detection and precession of spin accumulation in silicon, the cornerstone material of modern device technology, at temperatures up to 225 degrees Celsius. These results provide the first demonstration that spin accumulation in Si is viable as a basis for practical devices which meet the operating temperatures specified for commercial (85°C), industrial (100°C) and military (125°C) applications. This is a key enabling step for developng devices which rely on electron spin rather than electron charge, an approach known as semiconductor spintronics that is expected to provide devices with higher performance, lower power consumption and less heat dissipation. The complete findings of this study titled, "Electrical injection and detection of spin accumulation in silicon at 500K with magnetic metal / silicon dioxide contacts" are published in the 22 March 2011 issue of Nature Communications.
To read more click here...