Magnetoresistance effect on perpendicular graphene stacks

Engineerblogger
May 18, 2012

(left) Schematic of graphene device structure; (right) magneto resistance effects of multi-layered graphene showing the anisotropic resistance response with magnetic field direction.

Graphene, a perfect two-dimensional crystal of carbon atoms, has attracted intense interest in research due to its unique physical properties. Previous studies have focused on the quantum transport properties of massless Dirac fermions of graphene supported on planar substrates, and demonstrated its half-integer quantum hall effect, klein tunnelling and so on.

Recently, collaborating with Dr. Wu Hanchun in trinity college Dublin of Ireland, Peking University (PKU) young scientist Liao Zhimin in Professor Yu Dapeng’s group reported the study on fabrication of hybrid metal/multi-layered graphene/metal structure that is perpendicular to the substrate.

The transport studies showed that both temperature and magnetic field are capable of modulating the current perpendicular to graphene plane. The resistance of graphene device is about several tens of ohms. At a magnetic field of 14T, magneto resistance effects reach 100%. Moreover, the magnitude of magneto resistance is strongly dependent on magnetic field direction. This study is published on Advanced Materials, and is expected to have potential applications of graphene in magnetic electronics.

This work was supported by the National Natural Science Foundation of China, the National Basic Research Program of China (973 Program) and State Key Laboratory for Mesoscopic Physics.

Source: Peking University

Additional Information:

•  "Large Magnetoresistance in Few Layer Graphene Stacks with Current Perpendicular to Plane Geometry" by Zhi-Min Liao, Han-Chun Wu, Shishir Kumar, Georg S. Duesberg, Yang-Bo Zhou, Graham L. W. Cross, Igor V. Shvets, and Da-Peng Yu, Advanced Materials, 24, 1862 (2012).