June 30, 2011
Researchers have long used a technique called electron-beam (or e-beam) lithography to make prototype chips, but standard e-beam lithography is much slower than photolithography. Increasing its speed generally comes at the expense of resolution: Previously, the smallest chip features that high-speed e-beams could resolve were 25 nanometers across, barely better than the experimental 32-nanometer photolithography systems that several manufacturers have demonstrated. In a forthcoming issue of the journal Microelectronic Engineering, however, researchers at MIT’s Research Laboratory of Electronics (RLE) present a way to get the resolution of high-speed e-beam lithography down to just nine nanometers. Combined with other emerging technologies, it could point the way toward making e-beam lithography practical as a mass-production technique.
The most intuitive way for manufacturers to keep shrinking chip features is to switch to shorter wavelengths of light — what’s known in the industry as extreme ultraviolet. But that’s easier said than done. “Because the wavelength is so small, the optics [are] all different,” says Vitor Manfrinato, an RLE graduate student and first author on the new paper. “So the systems are much more complicated … [and] the light source is very inefficient.”
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